Solutions & Services

Sputter Targets

Improved Joint Strength and Sputtering Performance

S-Bond® active solders enable the dissimilar materials bonding and ceramic metal bonding to each other and to other metals, making an S-Bond solution very suitable for bonding sputter targets. S-Bond filler metal alloys produce reliable joints with copper, aluminum, steel, stainless steels, titanium, chromium, nickel alloys, refractory metal alloys and many ceramics including alumina, zirconia, AlN, and SiC.  S-Bond alloys also join to most semiconductors including Si, GaAs, CIGS, and others.  S-Bond 220 used in these applications offers much higher operating temperatures, up to 190°C, compared to indium soldering techniques which are only good to 130 C in service. S-Bond joints are nearly void free and offer excellent strengths and thermal contact.

S-Bond solders have also been proven to work very well in the conjunction with the Nano-Bond® process using the NanoFoils® from Indium Corp. S-Bond solders are used for ceramic metal bonding of sputtering target surfaces using an inserted Nano-Foil heats up the interface to make a nearly void free joint and no thermal expansion mismatch related damage to sensitive target materials since the process only heats the interface.

See our Blog for more on this Nano-Foil technology and related applications and processes.

S-Bond joins… 

  • Directly, without the use of flux.
  • Without pre-plating steps, eliminating multiple-step coating processes.
  • At temperatures below 400ºC, preventing the distortion and softening of metals and also preventing ceramic fractures.

The joints produced by S-Bond active solders are:

  • Strong (> 5,000 psi shear).
  • Ductile, based on Sn-Ag or Sn-In alloys.
  • Capable of service temperatures up to 190ºC.

S-Bond® active solder joining eliminates the need for flux and preplating while offering the capability to directly bond to ceramic and semiconductor materials. S-Bond® simplifies the joining of many of the typical sputter target geometries. The joining materials are Pb-free and their temperature capabilities exceed that of Indium. For example, S-Bond 220 and 220M joined sputter targets interfaces have shear strengths of 3 – 5,000 psi (20-32 MPa) and can be taken to 195ºC without significant lowering of the room temperature values.

S-Bond Materials for Sputter Target Joining

S-Bond Alloy          Tm (ºC)          Tservice          Joint Strength
                                                                               (to copper, psi)
115 (In-Sn-Ag)       120                100                2 – 3,000
130 (In-Sn-Ag)       135                120                2-3,000
140 (Sn-Bi-Ag)       150                135                3-4,000
220 (Sn-Ag)           235                195                5-6,000
220M (Sn-Ag)        235                195                5-6,000

Note: SBT 220M is formulated for joining semiconductors and silicon based compounds and has been found to be excellent for bonding to refractory metals, such as Mo, W, and Ta.

















Stainless steel



Semiconductors / Compounds / Ceramics


Gallium Arsenide

Zinc Sulfide

Silicon Dioxide

Indium Tin Oxide (ITO)

Al – Zinc Oxide (AZO),

Indium Zinc Gallium Oxide

Aluminum Oxide & Zirconium Oxides

Most other Metal Oxides

Titanium Carbide & Silicon Carbide

Copper Indium Gallium (Di)Selenide (CIGS)

Cadmium Telluride

Contact Us for a demonstration of S-Bond’s unique capability to meet many of your sputter target joining requirements. We also have an informative bulletin about S-Bond and Sputter Targets.