S-Bond 220M Developed for Silicon/Silicate Joining

The direct solder joining of silicon is difficult posing solder wetting and adherence challenges for many applications including electronic “die” packages, sensor chips and solar panels. The direct solder bonding to silicon (Si) has been limited by the wetting resistance of angstrom thick nascent silicon dioxide (SiO2) layers that naturally forms on silicon. To combat these solder bonding challenges, metal plating (vapor deposition of Ti and Ni) has been used. To address this challenge, S-Bond Technologies has developed and has recently been awarded a patent for its S-Bond 220M alloy which is a Sn-Ag-Ti-Ce-Ga + Mg alloy that has been optimized for direct Si solder bonding without flux nor plating. The new alloy bonds well to silicon, silica, and glass silicates based on a solder formulation that adds magnesium (Mg) in low enough levels that does not change the solder melt behavior but enhances the “active” nature of S-Bond alloys to interact with oxides of silicon and many other metals even more effectively than other active solders. These Mg modified active solders wet and adhere very well to silicon based on mechanical activation used in other active solders. Read more about S-Bond 220M Developed for Silicon/Silicate Joining