Sputter Targets
Improved Joint Strength and Sputtering Performance
S-Bond® active solders enable the dissimilar materials bonding and ceramic metal bonding to each other and to other metals, making an S-Bond solution very suitable for bonding sputter targets. S-Bond filler metal alloys produce reliable joints with copper, aluminum, steel, stainless steels, titanium, chromium, nickel alloys, refractory metal alloys and many ceramics including alumina, zirconia, AlN, and SiC. S-Bond alloys also join to most semiconductors including Si, GaAs, CIGS, and others. S-Bond 220 used in these applications offers much higher operating temperatures, up to 190°C, compared to indium soldering techniques which are only good to 130 C in service. S-Bond joints are nearly void free and offer excellent strengths and thermal contact.
S-Bond solders have also been proven to work very well in the conjunction with the Nano-Bond® process using the NanoFoils® from Indium Corp. S-Bond solders are used for ceramic metal bonding of sputtering target surfaces using an inserted Nano-Foil heats up the interface to make a nearly void free joint and no thermal expansion mismatch related damage to sensitive target materials since the process only heats the interface.
See our Blog for more on this Nano-Foil technology and related applications and processes.
S-Bond joins…
- Directly, without the use of flux.
- Without pre-plating steps, eliminating multiple-step coating processes.
- At temperatures below 400ºC, preventing the distortion and softening of metals and also preventing ceramic fractures.
The joints produced by S-Bond active solders are:
- Strong (> 5,000 psi shear).
- Ductile, based on Sn-Ag or Sn-In alloys.
- Capable of service temperatures up to 190ºC.
S-Bond® active solder joining eliminates the need for flux and preplating while offering the capability to directly bond to ceramic and semiconductor materials. S-Bond® simplifies the joining of many of the typical sputter target geometries. The joining materials are Pb-free and their temperature capabilities exceed that of Indium. For example, S-Bond 220 and 220M joined sputter targets interfaces have shear strengths of 3 – 5,000 psi (20-32 MPa) and can be taken to 195ºC without significant lowering of the room temperature values.
S-Bond Materials for Sputter Target Joining
S-Bond Alloy Tm (ºC) Tservice Joint Strength
(to copper, psi)
115 (In-Sn-Ag) 120 100 2 – 3,000
130 (In-Sn-Ag) 135 120 2-3,000
140 (Sn-Bi-Ag) 150 135 3-4,000
220 (Sn-Ag) 235 195 5-6,000
220M (Sn-Ag) 235 195 5-6,000
Note: SBT 220M is formulated for joining semiconductors and silicon based compounds and has been found to be excellent for bonding to refractory metals, such as Mo, W, and Ta.
Metals
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Gold
Silver
Nickel
Vanadium
Antimony
Tellurium
Germanium
Aluminum
Titanium
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Copper
Tantalum
Cobalt
Iron
Chromium
Manganese
Stainless steel
Molybdenum
Tungsten
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Semiconductors / Compounds / Ceramics
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Silicon
Gallium Arsenide
Zinc Sulfide
Silicon Dioxide
Indium Tin Oxide (ITO)
Al – Zinc Oxide (AZO),
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Indium Zinc Gallium Oxide
Aluminum Oxide & Zirconium Oxides
Most other Metal Oxides
Titanium Carbide & Silicon Carbide
Copper Indium Gallium (Di)Selenide (CIGS)
Cadmium Telluride
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Contact Us for a demonstration of S-Bond’s unique capability to meet many of your sputter target joining requirements. We also have an informative bulletin about S-Bond and Sputter Targets.
